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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1847 DESCRIPTION *Collector-Base Breakdown Voltage: VCBO= 1500V (Min.) *High Switching Speed *Built-in Damper Diode APPLICATIONS *Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector- Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage IC ICM Collector Current-Continuous w ww scs .i VALUE 1500 V 1500 V 7 V 5 A 15 A 2 A 3 W UNIT .cn mi e Collector Current-Peak IB B Base Current- Continuous Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 100 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1847 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A B 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1A B 1.5 10 1.0 5 25 V A mA ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1500V; IE= 0 IC= 1A; VCE= 5V hFE-1 DC Current Gain hFE-2 DC Current Gain IC= 4A; VCE= 10V fT Current-Gain--Bandwidth Product VECF C-E Diode Forward Voltage Switching times, Resistive Load tstg tf Storage Time w w scs .i w IF= 5A IC= 1A; VCE= 10V .cn mi e 4 2 MHz 2.3 V 1.5 s s IC= 4A; IB1= 1A; IB2= -2A; VCC= 200V 0.2 Fall Time isc Websitewww.iscsemi.cn 2 |
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